? semiconductor components industries, llc, 2015 september, 2015 ? rev. 1 1 publication order number: ngtb20n120ihw/d NGTB20N120IHWG igbt - induction cooking this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop (fs) trench construction, provides and superior performance in demanding switching applications, and offers low on?state voltage with minimal switching loss. the igbt is well suited for resonant or soft switching applications. features ? extremely efficient trench with fieldstop technology ? low switching loss reduces system power dissipation ? optimized for low losses in ih cooker application ? this is a pb?free device typical applications ? inductive heating ? consumer appliances ? soft switching absolute maximum ratings rating symbol value unit collector?emitter voltage @ t j = 25 c v ces 1200 v collector current @ t c = 25 c @ t c = 100 c i c 40 20 a pulsed collector current, t pulse limited by t jmax , 10 s pulse, v ge = 15 v i cm 80 a diode forward current @ t c = 25 c @ t c = 100 c i f 40 20 a diode pulsed current, t pulse limited by t jmax , 10 s pulse, v ge = 0 v i fm 80 a gate?emitter voltage transient gate?emitter voltage (t pulse = 5 s, d < 0.10) v ge 20 25 v power dissipation @ t c = 25 c @ t c = 100 c p d 341 170 w operating junction temperature range t j ?40 to +175 c storage temperature range t stg ?55 to +175 c lead temperature for soldering, 1/8 from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 20 a, 1200 v v cesat = 2.20 v e off = 0.48 mj www. onsemi.com g e c to?247 case 340al device package shipping ordering information NGTB20N120IHWG t o?247 (pb?free) 30 units / rail a = assembly location y = year ww = work week g = pb?free package marking diagram 20n120ih aywwg g c e
NGTB20N120IHWG www. onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case r jc 0.44 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 1200 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 20 a v ge = 15 v, i c = 20 a, t j = 175 c v cesat ? ? 2.20 2.30 2.65 ? v gate?emitter threshold voltage v ge = v ce , i c = 250 a v ge(th) 4.5 5.5 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 1200 v v ge = 0 v, v ce = 1200 v, t j = 150 c i ces ? ? ? ? 0.1 2.8 ma gate leakage current, collector?emitter short?circuited v ge = 20 v, v ce = 0 v i ges ? ? 100 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 3590 ? pf output capacitance c oes ? 90 ? reverse transfer capacitance c res ? 70 ? gate charge total v ce = 600 v, i c = 20 a, v ge = 15 v q g ? 150 ? nc gate to emitter charge q ge ? 31 ? gate to collector charge q gc ? 67 ? switching characteristic, inductive load turn?off delay time t j = 25 c v cc = 600 v, i c = 20 a r g = 10 v ge = 0 v/ 15v t d(off) ? 170 ? ns fall time t f ? 155 ? turn?off switching loss e off ? 0.48 ? mj turn?off delay time t j = 150 c v cc = 600 v, i c = 20 a r g = 10 v ge = 0 v/ 15v t d(off) ? 185 ? ns fall time t f ? 210 ? turn?off switching loss e off ? 0.92 ? mj diode characteristic forward voltage v ge = 0 v, i f = 20 a v ge = 0 v, i f = 20 a, t j = 175 c v f ? ? 2.2 3.8 2.75 v product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB20N120IHWG www. onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 8 6 5 4 3 2 1 0 0 10 20 30 40 50 60 figure 3. typical transfer characteristics figure 4. typical capacitance v ge , gate?emitter voltage (v) 10 5 0 0 10 20 30 40 50 60 figure 5. diode forward characteristics i c , collector current (a) i c , collector current (a) 7 v ge = 11 v to 20 v t j = 25 c 9 v 8 v 7 v 8 6 5 4 3 2 1 0 0 10 20 30 40 50 60 i c , collector current (a) 7 t j = 150 c 9 v 8 v 7 v t j = 25 c t j = 150 c v ge = 11 v to 20 v 12 34 6789 figure 6. typical gate charge v ce , collector?emitter voltage (v) 90 80 50 40 30 20 10 0 10 100 1000 10000 c, capacitance (pf) 10 0 c ies c oes c res 70 60 1 t j = 25 c 10 v 10 v 11 v f , forward voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 70 i f , forward current (a) t j = 25 c t j = 150 c 60 50 40 30 20 10 0 q g , gate charge (nc) 180 160 120 100 80 60 40 0 0 2 4 6 8 12 14 16 v ge , gate?emitter voltage (v) 20 0 10 v ce = 600 v v ce = 600 v v ge = 15 v i c = 20 a 3.5 4.0 4.5 5.0 20 140
NGTB20N120IHWG www. onsemi.com 4 typical characteristics figure 7. switching loss vs. temperature figure 8. switching time vs. temperature figure 9. safe operating area t j , junction temperature ( c) 140 120 100 80 60 40 20 0 0.8 switching loss (mj) 160 v ce = 600 v v ge = 15 v i c = 20 a rg = 10 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 e off figure 10. reverse bias safe operating area t j , junction temperature ( c) 140 120 100 80 60 40 20 0 100 1000 switching time (ns) 160 v ce = 600 v v ge = 15 v i c = 20 a rg = 10 t f t d(off) 0.9 1.0 v ce , collector?emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature v ce , collector?emitter voltage (v) i c , collector current (a) 1 10 100 1000 v ge = 15 v, t c = 125 c 1000 100 10 1 10k 10k figure 11. igbt transient thermal impedance on?pulse width (s) 1 0.1 0.01 0.0001 1e?06 1 square?wave peak r(t) ( c/w) 1e?05 50% duty cycle 20% 10% 5% 2% single pulse r ja = 0.44 junction c 1 c 2 r 1 r 2 duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n 0.1 0.01 0.001 0.0001 0.001 r i ( c/w) c i (j/ c) 0.08113 0.118279 0.115034 0.130170 0.001355 0.003898 0.008455 0.027490 0.076823 73.79876
NGTB20N120IHWG www. onsemi.com 5 figure 12. test circuit for switching characteristics
NGTB20N120IHWG www. onsemi.com 6 figure 13. definition of turn off waveform
NGTB20N120IHWG www. onsemi.com 7 package dimensions to?247 case 340al issue a e2 l1 d l b4 b2 b e 0.25 m ba m c a1 a 123 b e 2x 3x 0.635 m ba m a s p seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. slot required, notch may be rounded. 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimensions are measured at the outermost extreme of the plastic body. 5. lead finish is uncontrolled in the region defined by l1. 6. ? p shall have a maximum draft angle of 1.5 to the top of the part with a maximum diameter of 3.91. 7. dimension a1 to be measured in the region defined by l1. dim min max millimeters d 20.30 21.40 e 15.50 16.25 a 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 bsc a1 2.20 2.60 c 0.40 0.80 l 19.80 20.80 q 5.40 6.20 e2 4.32 5.49 l1 3.50 4.50 p 3.55 3.65 s 6.15 bsc b4 2.60 3.40 note 6 4 note 7 q note 4 note 3 note 5 e2/2 note 4 on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtb20n120ihw/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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